Prof. Vobecky was inducted into the ISPSD Hall of Fame on 5 June 2024 at the 36th ISPSD Conference in Bremen, Germany. His research on controlling the lifetime of charge carriers in semiconductors has contributed to pushing the parameters of silicon power diodes and thyristors to the limits of physical possibility.
Prof. Jan Vobecky has published several hundred papers in journals and international conferences (19 of them at ISPSD) and is the author of more than 80 granted patents in the field of power semiconductor devices. He has developed and qualified several industrial products, including fast commutation diodes and high voltage thyristors, which are used in HVDC transmission lines around the world and contribute to increased efficiency, energy savings and reduction of our carbon footprint.
"It is a great honor to be inducted into the ISPSD Symposium Hall of Fame, where my name is cited alongside distinguished pioneers in the power semiconductor industry. I have learned from many of them. Some have contributed new concepts and technologies for power components. I have a lot of respect for their professional contribution," said the researcher, who works at the Department of Microelectronics at the FEE CTU, about his recognition.
About ISPSD and the Hall of Fame
Since the first meeting held in Tokyo in 1988, the International Symposium on Power Semiconductor Devices and Integrated Circuits (ISPSD) has established itself as a major and truly international forum for technical discussions on all aspects of power semiconductor devices and integrated circuits. Conference venues alternate between Japan, North America, Europe and other regions. ISPSD excels in the quality of papers in power semiconductor devices and is considered the most prestigious technical forum in its field.